Title :
A 5 mW and 5% efficiency 210 GHz InP-based heterostructure barrier varactor quintupler
Author :
Xiao, Qun ; Duan, Yiwei ; Hesler, Jeffrey L. ; Crowe, Thomas W. ; Weikle, Robert M.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Virginia, Charlottesville, VA, USA
fDate :
4/1/2004 12:00:00 AM
Abstract :
This letter reviews the design, construction, and measurement of a 210 GHz heterostructure barrier varactor frequency quintupler. The quintupler utilizes planar heterostructure barrier varactors (HBVs) based on the InGaAs/InAlAs/AlAs material system and has produced a measured output power of 5.2 mW with 5.2% conversion efficiency at 210 GHz. This performance is comparable to the state-of-the-art results reported in the literature for HBV frequency triplers operating at millimeter and submillimeter wavelengths.
Keywords :
III-V semiconductors; MIMIC; frequency multipliers; gallium arsenide; indium compounds; integrated circuit design; microstrip circuits; varactors; 210 GHz; 5.2 mW; 5.2 percent; InGaAs-InAlAs-AlAs; InP; frequency multiplier; frequency quintupler; frequency triplers; heterostructure barrier varactor; millimeter wavelengths; quintupler construction; quintupler design; quintupler measurement; submillimeter wavelengths; Circuits; Cutoff frequency; Frequency conversion; Frequency measurement; Indium compounds; Indium gallium arsenide; Leakage current; Microstrip; Power measurement; Varactors;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2004.827120
