Title :
Emitter-collector breakdown voltage BVceo versus gain hFE for various n-p-n collector doping levels
Author :
Roulston, D.J. ; Depey, M.
Author_Institution :
University of Waterloo, Electrical Engineering Department, Waterloo, Canada
Abstract :
The communication presents a set of design curves of collector-emitter breakdown voltage BVceo versus gain hFE for various collector doping levels and thickness for n-p-n transistors. The results include epitaxial layer punch through and radial c-b junction breakdown.
Keywords :
bipolar transistors; doping levels; emitter collector breakdown voltage; epitaxial layer punch through; junction breakdown;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800572
