• DocumentCode
    967161
  • Title

    Emitter-collector breakdown voltage BVceo versus gain hFE for various n-p-n collector doping levels

  • Author

    Roulston, D.J. ; Depey, M.

  • Author_Institution
    University of Waterloo, Electrical Engineering Department, Waterloo, Canada
  • Volume
    16
  • Issue
    21
  • fYear
    1980
  • Firstpage
    803
  • Lastpage
    805
  • Abstract
    The communication presents a set of design curves of collector-emitter breakdown voltage BVceo versus gain hFE for various collector doping levels and thickness for n-p-n transistors. The results include epitaxial layer punch through and radial c-b junction breakdown.
  • Keywords
    bipolar transistors; doping levels; emitter collector breakdown voltage; epitaxial layer punch through; junction breakdown;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800572
  • Filename
    4245343
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967161