Title :
Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers
Author :
Bo Baoxue ; Gao Xin ; Wang Ling ; Li Hui ; Qu Yi
Author_Institution :
Changchun Univ. of Sci. & Technol., China
fDate :
5/1/2004 12:00:00 AM
Abstract :
A 1.5-W continuous-wave power output in a beam pattern of 3/spl deg/ is obtained from a new designed rhombus-like stripe strained quantum-well diode laser (/spl lambda/=980 nm) with a 150-μm-wide emission aperture grown by molecular beam epitaxy. The /spl eta//sub d/ is as high as 78%, and the maximum output power by the new stripe laser is 5.0 W for antireflection/high-reflection coated devices.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1.5 W; 1.5 mum; 5.0 W; 980 nm; InGaAs-AlGaAs-GaAs; InGaAs-AlGaAs-GaAs lasers; antireflection/high-reflection coated devices; broad area semiconductor lasers; contact stripe; continuous-wave power output; emission aperture; mode behavior; molecular beam epitaxy; rhombus-like stripe broad area lasers; strained quantum-well diode laser; stripe laser; Apertures; Diode lasers; Laser beams; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Optical design; Power generation; Quantum well lasers; Time of arrival estimation;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.826114
