Measurement of gain, group index, group velocity dispersion, and linewidth enhancement factor of an InGaN multiple quantum-well laser diode

Author

Gan, K.-G. ; Bowers, John E.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA

Volume

16

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

1256

Lastpage

1258

Abstract

Gain, group index, group velocity dispersion (GVD), temperature variation of refractive index, and linewidth enhancement factor of an In/sub 0.15/Ga/sub 0.85/N/In/sub 0.02/Ga/sub 0.98/N multiple quantum-well blue laser diode was measured using the Fourier transform method as a function of wavelength from 400 to 410 nm. At the lasing wavelength (403.5 nm), the group index is 3.4, the GVD (dn/sub g//d/spl lambda/) is -37 μm/sup -1/, the temperature variation of refractive index dn/dT is 1.3×10/sup -4/ K/sup -1/, and the linewidth enhancement factor is 5.6.

Keywords

Fourier transform optics; III-V semiconductors; gallium compounds; indium compounds; laser variables measurement; quantum well lasers; refractive index; semiconductor quantum wells; spectral line breadth; visible spectra; 400 to 410 nm; Fourier transform method; InGaN; InGaN multiple quantum-well laser diode; gain measurement; group index; group velocity dispersion; linewidth enhancement factor; refractive index; Diode lasers; Dispersion; Gain measurement; Gallium nitride; Instruments; Quantum well lasers; Refractive index; Spontaneous emission; Temperature; Velocity measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.826003

Filename

1291476