Title :
Open ampoule diffusion in InP
Author :
Favennec, P.N. ; Henry, Leanne ; Gauneau, M. ; L´Haridon, H. ; Pelous, G.
Author_Institution :
ICM/TOH, CNET, Lannion, France
Abstract :
We describe a new diffusion process to obtain Zn-doped p+-InP layers in an open ampoule in a PH3/H2 atmosphere. Using this process, we are able to control the diffusion and to realise planar and abrupt junctions while conserving the mirror-like InP surface.
Keywords :
III-V semiconductors; diffusion in solids; indium compounds; p-n homojunctions; semiconductor doping; III-V semiconductors; InP:Zn; PH3/H2 atmosphere; diffusion process; open ampoule diffusion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800591
