Title :
Active Q-switching of lateral field coupling control d.h. laser
Author :
Ito, H. ; Gen-ei, K. ; Inaba, Hiromi
Author_Institution :
Tohoku University, Research Institute of Electrical Communication, Sendai, Japan
Abstract :
Active Q-switching of d.h. semiconductor lasers is proposed and analysed. The method is based upon the coupling switch of a lateral evanescent field coupled laser with superposition of the simultaneous injection current change. This novel method relaxes greatly the required condition for realisation of a Q-switched semiconductor laser.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; semiconductor junction lasers; AlGaAs; III-V semiconductor; active Q switching; lateral evanescent field coupled laser; semiconductor DH laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800601
