• DocumentCode
    967466
  • Title

    Active Q-switching of lateral field coupling control d.h. laser

  • Author

    Ito, H. ; Gen-ei, K. ; Inaba, Hiromi

  • Author_Institution
    Tohoku University, Research Institute of Electrical Communication, Sendai, Japan
  • Volume
    16
  • Issue
    22
  • fYear
    1980
  • Firstpage
    846
  • Lastpage
    847
  • Abstract
    Active Q-switching of d.h. semiconductor lasers is proposed and analysed. The method is based upon the coupling switch of a lateral evanescent field coupled laser with superposition of the simultaneous injection current change. This novel method relaxes greatly the required condition for realisation of a Q-switched semiconductor laser.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; p-n heterojunctions; semiconductor junction lasers; AlGaAs; III-V semiconductor; active Q switching; lateral evanescent field coupled laser; semiconductor DH laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800601
  • Filename
    4245373
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967466