A two-dimensional DFB laser model accounting for carrier transport effects

Author

Sadovnikov, Alexei D. ; Li, Xun ; Huang, Wei-Ping

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

31

Issue

10

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

1856

Lastpage

1862

Abstract

A two-dimensional numerical model for DFB semiconductor laser simulation is developed and presented. In this model the transverse carrier transport and longitudinal spatial/spectral hole-burning effects in a bulk DFB laser are accounted for rigorously. Comparison with simplified models is made. Methods for improving the accuracy of steady-state and small-signal analyses by the simplified models are proposed and verified

Keywords

carrier density; distributed feedback lasers; electron-hole recombination; laser theory; optical hole burning; semiconductor device models; semiconductor lasers; DFB semiconductor laser simulation; accuracy; bulk DFB laser; carrier transport effects; longitudinal spatial hole-burning effects; small-signal analysis; spectral hole-burning effects; steady-state analysis; transverse carrier transport; two-dimensional DFB laser model; two-dimensional numerical model; Equations; Frequency; High speed optical techniques; Laser feedback; Laser modes; Optical feedback; Optical refraction; Optical variables control; Reflectivity; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.466062

Filename

466062