Title :
Ballistic electron transport in a nonparabolic band
Author :
Socha, J.B. ; Rees, G.J.
Author_Institution :
Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
The effect of conduction band nonparabolicity is incorporated into calculations of one-dimensional current/voltage characteristics in the ballistic regime. This modification does not remove the discrepancy between theory and experiment at higher voltages, which is thus probably due to scattering.
Keywords :
carrier mobility; electrical conductivity of crystalline semiconductors and insulators; semiconductors; ballistic electron transport; conduction band nonparabolicity; nonparabolic band; one dimensional current voltage characteristics; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800622
