DocumentCode
967731
Title
Method for reproducible l.p.e. growth of GaInAsP
Author
Janson, M. ; Josefsson, A.
Author_Institution
Institute of Microwave Technology, Stockholm, Sweden
Volume
16
Issue
23
fYear
1980
Firstpage
879
Lastpage
880
Abstract
A method for l.p.e. growth of GaInAsP at constant temperature (step cooling) which allows accurate and simple control of the melt supersaturation is described. Good thickness control and reproducibility of lattice parameters when using the same melt several times is also shown to be obtained.
Keywords
III-V semiconductors; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; GaInAsP; lattice parameters; melt supersaturation; reproducible LPE growth; thickness control;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800627
Filename
4245400
Link To Document