Applications for GaAs and silicon integrated circuits in next generation wireless communication systems

Author

Burns, Lawrence M.

Author_Institution

3Com Corp., Santa Clara, CA, USA

Volume

30

Issue

10

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

1088

Lastpage

1095

Abstract

Emerging applications for portable wireless voice and data communications systems are requiring increased data rates and functionality. Meeting cost and performance goals requires careful attention to system level design and partitioning such that appropriate technologies are employed in cost-effective solutions. New circuit designs and techniques are required to meet size, power, and regulatory restrictions. This provides an exciting opportunity for GaAs, silicon, and passive component technologies. This review paper will discuss factors influencing the choice of which technology is best suited to a particular application and present several system level architectures of radio-based communication systems. The paper will illustrate appropriate applications of GaAs, silicon, and passive integrated circuit technologies. A summary is given that highlights the relative strengths and weaknesses of each technology to date

Keywords

III-V semiconductors; application specific integrated circuits; data communication; elemental semiconductors; gallium arsenide; mobile radio; silicon; voice communication; GaAs; Si; data communications systems; integrated circuit technologies; radio-based communication systems; system level architectures; voice communications systems; wireless communication systems; Application specific integrated circuits; Appropriate technology; Circuit synthesis; Costs; Data communication; Gallium arsenide; Integrated circuit technology; Paper technology; Silicon; System-level design;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.466074

Filename

466074