DocumentCode :
967736
Title :
Applications for GaAs and silicon integrated circuits in next generation wireless communication systems
Author :
Burns, Lawrence M.
Author_Institution :
3Com Corp., Santa Clara, CA, USA
Volume :
30
Issue :
10
fYear :
1995
fDate :
10/1/1995 12:00:00 AM
Firstpage :
1088
Lastpage :
1095
Abstract :
Emerging applications for portable wireless voice and data communications systems are requiring increased data rates and functionality. Meeting cost and performance goals requires careful attention to system level design and partitioning such that appropriate technologies are employed in cost-effective solutions. New circuit designs and techniques are required to meet size, power, and regulatory restrictions. This provides an exciting opportunity for GaAs, silicon, and passive component technologies. This review paper will discuss factors influencing the choice of which technology is best suited to a particular application and present several system level architectures of radio-based communication systems. The paper will illustrate appropriate applications of GaAs, silicon, and passive integrated circuit technologies. A summary is given that highlights the relative strengths and weaknesses of each technology to date
Keywords :
III-V semiconductors; application specific integrated circuits; data communication; elemental semiconductors; gallium arsenide; mobile radio; silicon; voice communication; GaAs; Si; data communications systems; integrated circuit technologies; radio-based communication systems; system level architectures; voice communications systems; wireless communication systems; Application specific integrated circuits; Appropriate technology; Circuit synthesis; Costs; Data communication; Gallium arsenide; Integrated circuit technology; Paper technology; Silicon; System-level design;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.466074
Filename :
466074
Link To Document :
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