DocumentCode :
967745
Title :
GaAs converter IC´s for C-band DBS receivers
Author :
Yoshida, Sadayoshi ; Satoh, Kazunari ; Miya, Tatsuya ; Umemoto, Takeshi ; Hirayama, Hiromitsu ; Miyagaki, Katsunori ; Leong, Joseph
Author_Institution :
Compound Semicond. Div., NEC Corp., Kawasaki, Japan
Volume :
30
Issue :
10
fYear :
1995
fDate :
10/1/1995 12:00:00 AM
Firstpage :
1081
Lastpage :
1087
Abstract :
GaAs downconverter Monolithic Microwave Integrated Circuits (MMICs) for use in C-band direct broadcast satellite (DBS) receivers were developed. The IC consists of four (4) RF functional blocks and a dc bias block. The RF section includes a low noise amplifier, IF amplifier, mixer, and local oscillator. The dc section incorporates an internal dc bias generation circuit to compensate for device parameter fluctuations in wafer processing. The IC makes it easy to design a complete out-door converter unit with only the addition of two low noise FETs, a band pass filter, and an external dielectric resonator. This IC is realized on a small chip of only 1.1 mm×1.6 mm. The gate length of the FET is 0.5 μm. The active layers of the FETs and resistors are formed by an ion-implantation technique. This IC has a 3.0-dB noise figure and a 43-dB conversion gain at 80-mA total current consumption. To realize compact size and low cost, these ICs are offered in 12-pin QFP plastic packages
Keywords :
III-V semiconductors; MMIC frequency convertors; direct broadcasting by satellite; field effect MMIC; gallium arsenide; integrated circuit noise; integrated circuit packaging; ion implantation; microwave receivers; plastic packaging; television receivers; 0.5 mum; 12-pin QFP plastic packages; 3 dB; 43 dB; 80 mA; C-band DBS receivers; GaAs; GaAs downconverter MMICs; IF amplifier; RF functional blocks; band pass filter; conversion gain; dc bias block; external dielectric resonator; gate length; internal dc bias generation circuit; ion-implantation technique; local oscillator; low noise FET; low noise amplifier; mixer; noise figure; outdoor converter unit; total current consumption; FETs; Gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Radio frequency; Radiofrequency amplifiers; Satellite broadcasting;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.466075
Filename :
466075
Link To Document :
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