Low voltage, high efficiency GaAs Class E power amplifiers for wireless transmitters

Author

Sowlati, Tirdad ; Salama, C. Andre T ; Sitch, John ; Rabjohn, Gord ; Smith, David

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

30

Issue

10

fYear

1995

fDate

10/1/1995 12:00:00 AM

Firstpage

1074

Lastpage

1080

Abstract

A Class E power amplifier for mobile communications is presented. The advantages of Class E over Class B, Class C, and Class F power amplifiers in a low voltage design are discussed. A fully integrated Class E power amplifier module operating at 835 MHz is designed, fabricated, and tested. The circuit is implemented in a self-aligned-gate, depletion mode 0.8-μm GaAs MESFET process. The amplifier delivers 24 dBm of power to the 50-Ω load with a power added efficiency greater than 50% at a supply voltage of 2.5 V. The power dissipated in the integrated matching networks is 1.5 times the power dissipated in the transistor

Keywords

III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; UHF power amplifiers; gallium arsenide; integrated circuit design; land mobile radio; power amplifiers; transceivers; 0.8 mum; 2.5 V; 50 percent; 835 MHz; GaAs; GaAs Class E power amplifiers; integrated Class E power amplifier module; integrated matching networks; low voltage design; mobile communications; mobile transceiver; power added efficiency; power dissipation; self-aligned-gate depletion mode GaAs MESFET process; supply voltage; wireless transmitters; Communication standards; Frequency; Gallium arsenide; High power amplifiers; Interchannel interference; Low voltage; Mobile communication; Power amplifiers; Power generation; Transmitters;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.466076

Filename

466076