Title :
Active GaAs MMIC band-pass filters with automatic frequency tuning and insertion loss control
Author :
Aparin, Vladimir ; Katzin, Peter
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
fDate :
10/1/1995 12:00:00 AM
Abstract :
This paper presents the design and measured performance of active tunable band-pass MMIC filters and matched MMIC control circuits, both fabricated using a standard 1-μm GaAs MESFET foundry process. The control circuits generate filter frequency-tuning and Q-control bias voltages by using a dual-loop master-slave control scheme. Separate 3-section filters cover 1.5-2.0 and 1.96-2.64-GHz bands with 3-dB bandwidths of 86±6 and 126±1.0 MHz, respectively. The control circuits automatically maintain the filter insertion loss to within ±0.5 dB over these tuning ranges, and regulate the center frequency and insertion loss to within better than ±1.2 MHz and ±0.3 dB over a temperature range of -50°C to +75°C
Keywords :
MESFET integrated circuits; active filters; band-pass filters; circuit tuning; field effect MMIC; microwave filters; -50 to 75 degC; 1 micron; 1.5 to 2.0 GHz; 1.96 to 2.64 GHz; 116 to 136 MHz; 3-dB bandwidths; 80 to 92 MHz; GaAs; MESFET foundry process; MMIC band-pass filters; Q-control bias voltages; active tunable filters; automatic frequency tuning; center frequency; dual-loop master-slave control scheme; filter frequency-tuning voltages; insertion loss control; matched MMIC control circuits; Automatic frequency control; Automatic generation control; Band pass filters; Circuit optimization; Gallium arsenide; Insertion loss; MMICs; Tunable circuits and devices; Tuning; Voltage control;
Journal_Title :
Solid-State Circuits, IEEE Journal of
