DocumentCode :
967819
Title :
O.M. v.p.e. growth of AlGaSb and AlGaAsSb
Author :
Cooper, C.B. ; Saxena, R.R. ; Ludowise, M.J.
Author_Institution :
Varian Associates Inc., Corporate Solid State Laboratory, Palo Alto, USA
Volume :
16
Issue :
23
fYear :
1980
Firstpage :
892
Lastpage :
893
Abstract :
The epitaxial growth of AlGaSb and AlGaAsSb alloys by o.m. v.p.e. is reported. The growth technique and the dependence of the alloy composition on the input flux of gases are discussed.
Keywords :
III-V semiconductors; aluminium compounds; semiconductor growth; vapour phase epitaxial growth; AlGaAsSb; AlGaSb; VPE; growth technique; organometallic vapour phase epitaxy;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19800636
Filename :
4245409
Link To Document :
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