• DocumentCode
    967855
  • Title

    Measurements of refractive-index variation with free carrier density and temperature for 1.6 ¿m GaInAsP/InP lasers

  • Author

    Stubkjaer, K. ; Suematsu, Yasuharu ; Asada, Minoru ; Arai, Shigehisa ; Adams, A.R.

  • Author_Institution
    Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
  • Volume
    16
  • Issue
    23
  • fYear
    1980
  • Firstpage
    895
  • Lastpage
    896
  • Abstract
    The refractive-index variation with injected carrier density and temperature was measured for GaInAsP/InP b.h. lasers emitting at 1.6 ¿m. Values of dn/dN = ¿5.9 × 10¿27 m3 and dn/dT = 3 × 10¿4/°C resulted. The investigation was based on measurements of the wavelength shift of individual longitudinal modes in the spectra of the lasers.
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; indium compounds; refractive index; semiconductor junction lasers; 1.6 microns; GaInAsP/InP lasers; buried heterostructure laser; injected carrier density; longitudinal modes; refractive index variation; temperature dependence; wavelength shift;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800638
  • Filename
    4245411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967855