Title :
Microwave power amplification with InP f.e.t.s
Author :
Armand, M. ; Chevrier, J. ; Linh, Nuyen T.
Author_Institution :
Thomson-CSF, LCR, Orsay, France
Abstract :
InP f.e.t.s were fabricated from v.p.e. layers, with an Al gate of 1.5 ¿m × 308 ¿m. The power output at 9 GHz, with 4 dB gain, was 1.15 W/mm gate width. This result is believed to be higher than the best published results obtained with equivalent GaAs f.e.t. structures.
Keywords :
III-V semiconductors; field effect transistors; indium compounds; power transistors; semiconductor epitaxial layers; solid-state microwave devices; Al gate; III-V semiconductors; InP FETs; VPE; microwave power amplification;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800645
