مرکز منطقه ای اطلاع رساني علوم و فناوري - Proceedings of 47th Annual Device Research Conference (papers in summary form only received)

Keywords :

CMOS integrated circuits; VLSI; bipolar transistors; cathodes; electron tubes; epitaxial growth; field effect transistors; high electron mobility transistors; infrared detectors; integrated optoelectronics; optical fibres; photodetectors; photodiodes; semiconductor junction lasers; semiconductor superlattices; solid-state microwave devices; superconducting junction devices; thin film transistors; tunnel diodes; CMOS integrated circuits; Josephson devices; MIS devices; MM-wave bipolar transistors; MODFETs; MOSFETs; avalanche photodiodes; bipolar transistors; cold cathode materials; cryogenic electronics; electron tubes; epitaxial growth; infrared detectors; integrated optoelectronics; microwave FETs; millimeter-wave FETs; optical fibers; p-i-n photodiodes; photodetectors; photorefractive materials; power FETs; quantum-effect semiconductor devices; quantum-well devices; quantum-well lasers; semiconductor heterojunctions; semiconductor lasers; silicon-on-insulator; superconducting devices; superlattices; thin-film transistors; tunnel devices; tunnel diodes; tunnel transistors; wafer-scale integration; Bipolar transistors; CMOS integrated circuits; Cathodes; Electron tubes; Epitaxial growth; FETs; Infrared detectors; Integrated optoelectronics; MODFETs; Microwave devices; Optical fibers; Photodetectors; Photodiodes; Semiconductor lasers; Semiconductor superlattices; Thin film transistors; Tunnel diodes; Very-large-scale integration;