DocumentCode :
968119
Title :
Photoacoustic effect in laser annealing
Author :
Hoh, K.
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Volume :
16
Issue :
24
fYear :
1980
Firstpage :
931
Lastpage :
933
Abstract :
The acoustic wave generated in silicon crystal during laser annealing has been observed. The acoustic signal increases superlinearly with incident laser energy beyond the melting threshold. This can be used for monitoring the state of melting during the annealing.
Keywords :
elemental semiconductors; laser beam annealing; melting; photoacoustic effect; silicon; Si crystals; elemental semiconductor; laser annealing; photoacoustic effect;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19800664
Filename :
4245438
Link To Document :
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