DocumentCode
968119
Title
Photoacoustic effect in laser annealing
Author
Hoh, K.
Author_Institution
Electrotechnical Laboratory, Tsukuba, Japan
Volume
16
Issue
24
fYear
1980
Firstpage
931
Lastpage
933
Abstract
The acoustic wave generated in silicon crystal during laser annealing has been observed. The acoustic signal increases superlinearly with incident laser energy beyond the melting threshold. This can be used for monitoring the state of melting during the annealing.
Keywords
elemental semiconductors; laser beam annealing; melting; photoacoustic effect; silicon; Si crystals; elemental semiconductor; laser annealing; photoacoustic effect;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19800664
Filename
4245438
Link To Document