DocumentCode
968151
Title
InAs HEMT narrowband amplifier with ultra-low power dissipation
Author
Kruppa, W. ; Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Park, D. ; Bass, R.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
42
Issue
12
fYear
2006
fDate
6/8/2006 12:00:00 AM
Firstpage
688
Lastpage
690
Abstract
The design, fabrication and performance of a prototype narrowband amplifier using InAs-channel HEMTs are reported. The amplifier, which is realised on an RT/Duroid circuit board with a combination of transmission lines and lumped components, is intended for a long-life battery-powered application. The two-stage amplifier has 20 dB of gain with a bandwidth of 4% in S-band and dissipates a total power of only 365 μW.
Keywords
HEMT circuits; III-V semiconductors; indium compounds; low-power electronics; microwave amplifiers; 20 dB; 365 muW; HEMT device; InAs; RT/Duroid circuit board; S-band; lumped components; microwave amplifier; narrowband amplifier; transmission lines; two-stage amplifier; ultra-low power dissipation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20061107
Filename
1642477
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