Title :
InAs HEMT narrowband amplifier with ultra-low power dissipation
Author :
Kruppa, W. ; Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Park, D. ; Bass, R.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
6/8/2006 12:00:00 AM
Abstract :
The design, fabrication and performance of a prototype narrowband amplifier using InAs-channel HEMTs are reported. The amplifier, which is realised on an RT/Duroid circuit board with a combination of transmission lines and lumped components, is intended for a long-life battery-powered application. The two-stage amplifier has 20 dB of gain with a bandwidth of 4% in S-band and dissipates a total power of only 365 μW.
Keywords :
HEMT circuits; III-V semiconductors; indium compounds; low-power electronics; microwave amplifiers; 20 dB; 365 muW; HEMT device; InAs; RT/Duroid circuit board; S-band; lumped components; microwave amplifier; narrowband amplifier; transmission lines; two-stage amplifier; ultra-low power dissipation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061107
