Title :
Symmetric separate confinement heterostructure lasers with low threshold and narrow beam divergence by m.b.e.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
By optimising the layer structure in a symmetric separate confinement heterostructure laser, and by using molecular beam epitaxy to grow the very thin active layer (~500 Å) needed, very low current threshold densities of ~600 Å/cm2 without reflectance mirror coatings and very stable narrow beam divergence of ¿¿~30° and ¿¿~4° were reproducibly obtained.
Keywords :
molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 600 A/cm2; layer structure; low current threshold densities; molecular beam epitaxial growth; semiconductor junction lasers; stable narrow beam divergence; symmetric separate confinement heterostructure laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800669
