Title :
1.27 μm metamorphic InGaAs quantum well lasers on GaAs substrates
Author :
Tångring, I. ; Wang, S. ; Sadeghi, M. ; Larsson, A.
Author_Institution :
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Gothenburg, Sweden
fDate :
6/8/2006 12:00:00 AM
Abstract :
Pulsed operation at a wavelength of 1.27 μm from metamorphic ridge-waveguide (RWG) InGaAs quantum well lasers on GaAs substrates using an alloy graded buffer, grown by molecular beam epitaxy, is demonstrated. Laser performance is anisotropic along the two orthogonal <1±10> directions with lower threshold currents along the <1-10> direction. Post-growth rapid thermal annealing further reduces threshold currents. For 4 μm-wide RWG lasers, minimum threshold current densities are 1-2.5 kA/cm2 for cavity lengths 0.6-1.5 mm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; rapid thermal annealing; ridge waveguides; semiconductor growth; waveguide lasers; 0.6 to 1.5 mm; 1.27 micron; 4 micron; InGaAs-GaAs; RWG lasers; alloy graded buffer; metamorphic ridge-waveguide lasers; molecular beam epitaxy; post-growth rapid thermal annealing; quantum well lasers; threshold currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20060943
