Title :
Low-threshold high-To constricted double heterojunction AlGaAs diode lasers
Author :
Botez, D. ; Connolly, J.C.
Author_Institution :
RCA Laboratories, Princeton, USA
Abstract :
Constricted double heterojunction (c.d.h.) diode lasers of relatively low c.w. thresholds (28¿40 mA) are obtained by growing structures that maximise the amount of current flow into the lasing spot. These values are obtained while still using standard 10 ¿m wide oxide-defined stripe contacts. Over the 20¿70°C temperature interval, we find threshold current temperature coefficients as high as 320°C and a virtually constant external differential quantum efficiency.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 20 to 70degrees C; 28 to 40 mA threshold; 320degrees C; AlGaAs; constricted double heterojunction diode lasers; differential quantum efficiency; semiconductor junction lasers; threshold current temperature coefficients;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800671
