Title :
Low-loss monolithic extended cavity laser by low-energy ion-implantation induced intermixing
Author :
Wang, Y. ; Djie, H.S. ; Ooi, B.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fDate :
6/8/2006 12:00:00 AM
Abstract :
The fabrication and characterisation of a monolithic extended cavity ridge laser using low-energy ion-implantation induced quantum well intermixing on InGaAs/InGaAsP quantum-well structure are presented. An extremely low propagation loss of 2 cm-1 in the passive waveguide section has been measured.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; indium compounds; ion implantation; laser cavity resonators; quantum well lasers; waveguide lasers; InGaAs-InGaAsP; ion-implantation induced intermixing; monolithic extended cavity laser; monolithic extended cavity ridge laser; passive waveguide section; propagation loss; quantum-well structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061270
