Title :
Refractive index data from GaxIn1¿xAsyP1¿y films
Author :
Chandra, P. ; Coldren, Larry A. ; Strege, K.E.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
We have measured the refractive index versus wavelength of several compositions of GaInAsP grown by vapour phase epitaxy on InP. The self-consistent data show reasonable agreement with existing theories for wavelengths larger than the absorption edge. However, at and below the band edge, detail is measured that is not predicted by the simple theories.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; refractive index; semiconductor epitaxial layers; semiconductor junction lasers; vapour phase epitaxial growth; Gaxln1-xAsyP1-y films; III-V semiconductor; refractive index; vapour phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810005
