Title :
A physical model for mode-locking process of colliding pulse mode-locked multiquantum-well semiconductor laser
Author :
Chen, Weiyou ; Zhu, Jintian ; Liu, Shiyong
Author_Institution :
Dept. of Electron. Eng., Jilin Univ., Changchun, China
fDate :
9/1/1995 12:00:00 AM
Abstract :
In this paper, we first present a physical model for mode-locking process of the colliding pulse mode-locked multiquantum-well laser diode (CPM-MQW-LD). The absorption of saturable absorber on pulse leading edge and the scattering of the transient grating generated in absorption and gain regions on pulse trailing edge are considered. As an example, the mode-locking process of a multiquantum-well structure laser and the effect of transient grating on pulse width and peak power are studied
Keywords :
III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser beams; laser mode locking; optical saturable absorption; quantum well lasers; InGaAs-InGaAsP; absorption regions; colliding pulse mode-locked multiquantum-well semiconductor laser; gain regions; mode-locked multiquantum-well laser diode; mode-locking process; multiquantum-well structure laser; peak power; physical model; pulse leading edge; pulse trailing edge; pulse width; saturable absorber; transient grating; Absorption; Erbium; Gratings; Laser mode locking; Laser theory; Optical pulse generation; Optical pulses; Partial differential equations; Refractive index; Space vector pulse width modulation;
Journal_Title :
Quantum Electronics, IEEE Journal of
