A physical model for mode-locking process of colliding pulse mode-locked multiquantum-well semiconductor laser

Author

Chen, Weiyou ; Zhu, Jintian ; Liu, Shiyong

Author_Institution

Dept. of Electron. Eng., Jilin Univ., Changchun, China

Volume

31

Issue

9

fYear

1995

fDate

9/1/1995 12:00:00 AM

Firstpage

1663

Lastpage

1667

Abstract

In this paper, we first present a physical model for mode-locking process of the colliding pulse mode-locked multiquantum-well laser diode (CPM-MQW-LD). The absorption of saturable absorber on pulse leading edge and the scattering of the transient grating generated in absorption and gain regions on pulse trailing edge are considered. As an example, the mode-locking process of a multiquantum-well structure laser and the effect of transient grating on pulse width and peak power are studied

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser beams; laser mode locking; optical saturable absorption; quantum well lasers; InGaAs-InGaAsP; absorption regions; colliding pulse mode-locked multiquantum-well semiconductor laser; gain regions; mode-locked multiquantum-well laser diode; mode-locking process; multiquantum-well structure laser; peak power; physical model; pulse leading edge; pulse trailing edge; pulse width; saturable absorber; transient grating; Absorption; Erbium; Gratings; Laser mode locking; Laser theory; Optical pulse generation; Optical pulses; Partial differential equations; Refractive index; Space vector pulse width modulation;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.406380

Filename

406380