• DocumentCode
    968529
  • Title

    Reciprocity failure in novolak/diazoquinone photoresist with 364-nm exposure

  • Author

    Sheats, James R.

  • Author_Institution
    Hewlett-Packard Co., Palo Alto, CA, USA
  • Volume
    35
  • Issue
    1
  • fYear
    1988
  • fDate
    1/1/1988 12:00:00 AM
  • Firstpage
    129
  • Lastpage
    131
  • Abstract
    Intensity-independent photobleaching (reciprocity failure) was observed when a film of novolak/diazoquinone photoresist was exposed at 364 and 351 nm in the intensity range 1 to 400 mW/cm2. It was found that a dark reaction can be observed for short times after turning off the light during a bleach. It is postulated that these effects are a result of the absorbance of the intermediate ketene, which may decay on the same time scale as the exposure time and hence introduce a nonphotochemical time-dependent bleaching that couples with the photochemical bleaching to give reciprocity failure. The magnitude of the reciprocity failure is sufficient to have a significant detrimental effect on resolution and process control. Thus it is important not only to reduce the absorbance of the final product but also that of the intermediates
  • Keywords
    failure analysis; optical saturable absorption; photoresists; polymers; semiconductor technology; 351 nm; 364 nm; absorbance; dark reaction; exposure time; intermediate ketene; nonphotochemical time-dependent bleaching; novolak/diazoquinone photoresist; photobleaching; photochemical bleaching; process control; reciprocity failure; resolution; Argon; Band pass filters; Bleaching; Chemistry; Lamps; Laser beams; Optical pulses; Process control; Resins; Resists;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2428
  • Filename
    2428