Title :
Reciprocity failure in novolak/diazoquinone photoresist with 364-nm exposure
Author :
Sheats, James R.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
fDate :
1/1/1988 12:00:00 AM
Abstract :
Intensity-independent photobleaching (reciprocity failure) was observed when a film of novolak/diazoquinone photoresist was exposed at 364 and 351 nm in the intensity range 1 to 400 mW/cm2. It was found that a dark reaction can be observed for short times after turning off the light during a bleach. It is postulated that these effects are a result of the absorbance of the intermediate ketene, which may decay on the same time scale as the exposure time and hence introduce a nonphotochemical time-dependent bleaching that couples with the photochemical bleaching to give reciprocity failure. The magnitude of the reciprocity failure is sufficient to have a significant detrimental effect on resolution and process control. Thus it is important not only to reduce the absorbance of the final product but also that of the intermediates
Keywords :
failure analysis; optical saturable absorption; photoresists; polymers; semiconductor technology; 351 nm; 364 nm; absorbance; dark reaction; exposure time; intermediate ketene; nonphotochemical time-dependent bleaching; novolak/diazoquinone photoresist; photobleaching; photochemical bleaching; process control; reciprocity failure; resolution; Argon; Band pass filters; Bleaching; Chemistry; Lamps; Laser beams; Optical pulses; Process control; Resins; Resists;
Journal_Title :
Electron Devices, IEEE Transactions on