Title :
Extremely high electron mobilities in modulation-doped GaAs-AlxGa1¿xAs heterojunction superlattices
Author :
Wang, W.I. ; Wood, C.E.C. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Ithaca, USA
Abstract :
GaAs-AlxGa1¿xAs modulation doped multilayer structures with 77 K electron mobilities up to 80 300 cm2V¿1s¿1 at a carrier concentration of 6×1016 cm¿3 have been grown by molecular beam epitaxy. Such high mobilities should make the performance of GaAs integrated logic circuits at liquid nitrogen temperature comparable to that of superconducting Josephson junctions.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; semiconductor superlattices; GaAs-AlxGa1-xAs heterojunction superlattices; III-V semiconductors; carrier concentration; electron mobilities; integrated logic circuits; modulation doped structures; molecular beam epitaxy; superconducting Josephson junctions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810027
