• DocumentCode
    968578
  • Title

    Extremely high electron mobilities in modulation-doped GaAs-AlxGa1¿xAs heterojunction superlattices

  • Author

    Wang, W.I. ; Wood, C.E.C. ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering and National Research and Resource Facility for Submicron Structures, Ithaca, USA
  • Volume
    17
  • Issue
    1
  • fYear
    1981
  • Firstpage
    36
  • Lastpage
    37
  • Abstract
    GaAs-AlxGa1¿xAs modulation doped multilayer structures with 77 K electron mobilities up to 80 300 cm2V¿1s¿1 at a carrier concentration of 6×1016 cm¿3 have been grown by molecular beam epitaxy. Such high mobilities should make the performance of GaAs integrated logic circuits at liquid nitrogen temperature comparable to that of superconducting Josephson junctions.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; molecular beam epitaxial growth; p-n heterojunctions; semiconductor superlattices; GaAs-AlxGa1-xAs heterojunction superlattices; III-V semiconductors; carrier concentration; electron mobilities; integrated logic circuits; modulation doped structures; molecular beam epitaxy; superconducting Josephson junctions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810027
  • Filename
    4245487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968578