Title :
High speed III-V electrooptic waveguide modulators at λ-1.3 μm
Author :
Wang, S.Y. ; Lin, S.H.
Author_Institution :
Hewlett-Packard Labs., Palo Alto, CA, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
Traveling wave GaAs electrooptic waveguide modulators at a wavelength of 1.3 μm with bandwidth in excess of 20 GHz have been developed and characterized. The design and characteristics of both p-i-n modulators in microstrip configuration and Schottky barrier on n --GaAs/semi-insulating (SI) GaAs in the coplanar strip configuration modulators are discussed. It is shown that microwave loss and slowing on n+ GaAs substrates will limit the bandwidth of the microstrip modulator to less than 10 GHz for a device 8 mm in length. Modulators with bandwidths in excess of 10 GHz are fabricated on SI GaAs substrates
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; integrated optics; optical modulation; optical waveguides; GaAs electrooptic waveguide modulators; III-V semiconductors; Schottky barrier; coplanar strip configuration; microstrip configuration; p-i-n modulators; traveling wave modulators; Bandwidth; Electrooptic modulators; Electrooptical waveguides; Gallium arsenide; III-V semiconductor materials; Microstrip; Microwave devices; PIN photodiodes; Schottky barriers; Strips;
Journal_Title :
Lightwave Technology, Journal of
