Title :
Effect of vacuum annealing cleaning on electrical characteristics of GaAs1¿xPx-Mo Schottky diodes
Author :
Calleja, E. ; Piqueras, J.
Author_Institution :
Universidad Autonoma de Madrid, Laboratorio de Semiconductores Instituto de Fisica del Estado Solido (CSIC-UAM) Facultad de Ciencias, Madrid, Spain
Abstract :
A vacuum annealing procedure for surface cleaning prior to barrier metal evaporation is proposed. The reported method is suitable for III-V compounds and has been checked for GaAs1¿xPx-Mo Schottky diodes. Electrical characteristics of the junctions seem to be best at around 550°C, but for higher temperatures the electrical characteristics degenerate, indicating the incorporation of a surface layer with a high density of defects.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; gallium compounds; molybdenum; semiconductor-metal boundaries; surface treatment; GaAs1-xPx-Mo Schottky diodes; III-V semiconductors; barrier metal evaporation; electrical characteristics; surface cleaning; vacuum annealing cleaning;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810028
