Title :
Harmonic generation due to ballistic electron transport in GaAs
Author :
Raychaudhuri, D. ; Chattopadhyay, D.
Author_Institution :
University of Calcutta, Calcutta, India
fDate :
3/1/1983 12:00:00 AM
Abstract :
Harmonics produced by the nonlinearity in the current-voltage characteristics of a ballistic diode are studied for a GaAs sample of thickness 1 µm at 77 K under collision-free condition. Harmonic generation is found to be maximum at zero bias, the value for the second-harmonic current being 50 percent for a signal amplitude of 0.2 V.
Keywords :
Analytical models; Current-voltage characteristics; Electrons; Frequency conversion; Gallium arsenide; Hybrid junctions; Poisson equations; Semiconductor diodes; Transmission lines; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1983.12603
