• DocumentCode
    968666
  • Title

    Threshold voltage of a narrow-width MOSFET

  • Author

    Akers, L.A.

  • Author_Institution
    Rockwell International, Electronics Research Center, Anaheim, USA
  • Volume
    17
  • Issue
    1
  • fYear
    1981
  • Firstpage
    49
  • Lastpage
    51
  • Abstract
    A simple closed-form analytical expression of the threshold voltage for a narrow-width MOSFET is developed. The narrow-width model gives a threshold voltage expression as a function of gate oxide thickness, channel doping concentration, backgate bias and channel width. The theory is compared with experimental results and the agreement is close.
  • Keywords
    insulated gate field effect transistors; semiconductor device models; MOSFET; backgate bias; channel doping; gate oxide thickness; narrow width model; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810036
  • Filename
    4245496
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968666