Title :
Threshold voltage of a narrow-width MOSFET
Author_Institution :
Rockwell International, Electronics Research Center, Anaheim, USA
Abstract :
A simple closed-form analytical expression of the threshold voltage for a narrow-width MOSFET is developed. The narrow-width model gives a threshold voltage expression as a function of gate oxide thickness, channel doping concentration, backgate bias and channel width. The theory is compared with experimental results and the agreement is close.
Keywords :
insulated gate field effect transistors; semiconductor device models; MOSFET; backgate bias; channel doping; gate oxide thickness; narrow width model; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810036
