Title :
Schottky-barrier coupled Schottky-barrier gate GaAs FET logic
Author :
Hashizume, N. ; Yamada, H. ; Tomizawa, K.
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
First accounts of the experimental details of Schottky-barrier gate GaAs FET logic circuits that use a Schottky barrier for interstage level shifting are described. Tpd and power consumption of an inverter in an 11-stage ring oscillator showed 120 ps and 12 mW, respectively, with FET gate dimensions of 3×50 ¿m2.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; integrated logic circuits; GaAs FET logic circuits; III-V semiconductors; Schottky barrier gate; interstage level shifting; invertor; ring oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810037
