Photoemission with picosecond lasers: fast electron dynamics at the GaAs (110) surface

Author

Haight, Richard ; Silberman, Jole A.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

25

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2556

Lastpage

2561

Abstract

Subpicosecond pulses of 10.7-eV radiation from a tunable laser-based source are used to carry out photoemission investigations of the electronic dynamics on the laser-excited surface of GaAs (110). Angle-resolved studies have revealed a rapid surface intervalley scattering process that transfers electrons between the directly excited, surface Brillouin zone center to a previously unobserved valley within the bandgap at the surface zone edge. The scattering time has been determined to be 0.4±0.1 ps. A model that describes the scattering dynamics is presented

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; surface electron states; surface scattering; ultraviolet photoelectron spectra; 0.4 ps; 10.7 eV; 10.7-eV radiation; GaAs; GaAs (110) surface; III-V semiconductor; angle-resolved studies; bandgap; electronic dynamics; fast electron dynamics; laser-excited surface; photoemission investigations; picosecond lasers; rapid surface intervalley scattering process; scattering dynamics; scattering time; subpicosecond pulses; surface Brillouin zone center; surface zone edge; tunable laser-based source; Brillouin scattering; Electrons; Gallium arsenide; Laser excitation; Laser modes; Optical pulses; Photoelectricity; Photonic band gap; Surface emitting lasers; Tunable circuits and devices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.40642

Filename

40642