Heavy-Ion and Laser Induced Charge Collection in SiGe Channel $p{\\rm MOSFETs}$

Author

En Xia Zhang ; Samsel, I.K. ; Hooten, N.C. ; Bennett, W.G. ; Funkhouser, Erik D. ; Kai Ni ; Ball, D.R. ; McCurdy, Michael W. ; Fleetwood, D.M. ; Reed, R.A. ; Alles, Michael L. ; Schrimpf, R.D. ; Linten, D. ; Mitard, J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3187

Lastpage

3192

Abstract

Heavy-ion and two-photon-absorption (TPA) experiments have been performed on ultra-thin implant-free quantum well SiGe channel pMOSFETs. Both the single-event-transient pulse magnitude and polarity can depend strongly on the location of the strike along the device channel. The polarity inversion occurs primarily because very limited transient charge collection occurs below the quantum well, as confirmed by two-dimensional TCAD simulation.

Keywords

Ge-Si alloys; MOSFET; laser materials processing; radiation hardening (electronics); semiconductor materials; semiconductor quantum wells; SiGe; TPA; device channel; heavy-ion charge collection; laser induced charge collection; polarity inversion; single-event-transient pulse magnitude; transient charge collection; two-dimensional TCAD simulation; two-photon-absorption; ultra-thin implant-free quantum well channel pMOSFETs; Lasers; MOSFET; Performance evaluation; Silicon germanium; Single event transients; Transient analysis; Heavy ion strike; laser; polarity; siGe $p{rm MOSFETs}$; single-event-transient;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2357440

Filename

6935027