DocumentCode :
9687
Title :
Heavy-Ion and Laser Induced Charge Collection in SiGe Channel 
Author :
En Xia Zhang ; Samsel, I.K. ; Hooten, N.C. ; Bennett, W.G. ; Funkhouser, Erik D. ; Kai Ni ; Ball, D.R. ; McCurdy, Michael W. ; Fleetwood, D.M. ; Reed, R.A. ; Alles, Michael L. ; Schrimpf, R.D. ; Linten, D. ; Mitard, J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Volume :
61
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
3187
Lastpage :
3192
Abstract :
Heavy-ion and two-photon-absorption (TPA) experiments have been performed on ultra-thin implant-free quantum well SiGe channel pMOSFETs. Both the single-event-transient pulse magnitude and polarity can depend strongly on the location of the strike along the device channel. The polarity inversion occurs primarily because very limited transient charge collection occurs below the quantum well, as confirmed by two-dimensional TCAD simulation.
Keywords :
Ge-Si alloys; MOSFET; laser materials processing; radiation hardening (electronics); semiconductor materials; semiconductor quantum wells; SiGe; TPA; device channel; heavy-ion charge collection; laser induced charge collection; polarity inversion; single-event-transient pulse magnitude; transient charge collection; two-dimensional TCAD simulation; two-photon-absorption; ultra-thin implant-free quantum well channel pMOSFETs; Lasers; MOSFET; Performance evaluation; Silicon germanium; Single event transients; Transient analysis; Heavy ion strike; laser; polarity; siGe $p{rm MOSFETs}$
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2357440
Filename :
6935027
Link To Document :
