Title :
Deep level spectroscopy in InP:Fe
Author :
Bremond, G. ; Nouailhat, A. ; Guillot, G. ; Cockayne, B.
Author_Institution :
Institut National des Sciences Appliquées de Lyon 20, Laboratoire de Physique de la Matiÿre, Villeurbanne, France
Abstract :
The characteristics of a single electron trap related to the iron deep level acceptor have been determined for the first time by DLTS techniques in indium phosphide. An activation energy of 0.63 eV and a capture cross-section of 3.5×10¿14 cm2 have been measured. The presence of this trap in nominally undoped samples shows that iron can be an important residual impurity in InP.
Keywords :
III-V semiconductors; deep level transient spectroscopy; electron traps; indium compounds; iron; DLTS techniques; III-V semiconductors; InP:Fe; activation energy; capture cross section; deep level acceptor; electron trap;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810040
