Title :
Characterization of Al0.3Ga0.7As/GaAs quantum-well delta-doped channel FET grown by molecular-beam epitaxy
Author :
Hong, Woo-Pyo ; Harbison, J. ; Florez, L.T. ; Abeles, J.H.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
Summary form only given. The authors investigated the transport properties of electrons in delta-doped channels formed both in bulk GaAs and in quantum wells by Hall and Schubnikov-de Haas measurements. They also investigated the DC and microwave characteristics of FETs made from Al0.3Ga0.7As/GaAs heterostructures with a quantum-well delta-doped channel. FETs showed a high drain current capability, large breakdown voltage, low output conductance, large intrinsic transconductance, and large gate voltage swing around maximum transconductance.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; molecular beam epitaxial growth; semiconductor quantum wells; solid-state microwave devices; Al0.3Ga0.7As-GaAs; DC characteristics; Hall effect measurements; Schubnikov-de Haas measurements; breakdown voltage; bulk GaAs; delta-doped channel FET; electrons; gate voltage swing; heterostructures; high drain current capability; intrinsic transconductance; microwave characteristics; molecular-beam epitaxy; output conductance; quantum-well; transport properties; Breakdown voltage; Doping; Electrons; FETs; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Quantum well devices; Quantum wells; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
