MIC IMPATT diode oscillator stabilised by temperature compensated dielectric resonator

Barium nonatitanate resonators offer simple microwave circuit designs for stabilised oscillators. An integrated circuit X-band IMPATT diode oscillator was designed and results are presented for both the stabilised and unstabilised oscillator. There was a considerable improvement in the stabilised oscillator spectrum and temperature sensitivity, e.g. the unstabilised oscillator had a line width of 0.5 MHz at 38 dB below the peak whereas the stabilised oscillator had a 0.5 MHz linewidth at 52 dB below the peak. The temperature sensitivity of the stabilised oscillator was ~40 kHz/°C over the range 0 to 60°C, which was about a third of that of the unstabilised oscillator.