High-Power Frequency Stabilized GaSb DBR Tapered Laser

Author

Müller, Mirjam ; Bauer, Adam ; Lehnhardt, Thomas ; Kamp, Martin ; Forchel, Alfred

Author_Institution

Tech. Phys., Univ. Wurzburg, Wurzburg

Volume

20

Issue

24

fYear

2008

Firstpage

2162

Lastpage

2164

Abstract

The authors present distributed Bragg reflector (DBR) tapered lasers fabricated on the GaInSb-AlGaAsSb material system. These index guided tapered lasers are equipped with first-order chromium DBRs acting as frequency-selective mirrors on the rear facet. Hence, high-power wavelength stabilized lasers could be realized. The devices exhibit output powers of up to 87 mW and sidemode suppression ratios of 40 dB at an emission wavelength of 2.03 mum in continuous-wave operation.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser frequency stability; laser mirrors; optical fabrication; optical materials; refractive index; semiconductor lasers; DBR tapered laser fabrication; GaInSb-AlGaAsSb; continuous-wave operation; distributed Bragg reflector; first-order chromium DBR; frequency-selective mirrors; high-power frequency stabilized laser; high-power wavelength stabilized lasers; index guided tapered lasers; laser emission wavelength; power 87 mW; sidemode suppression ratios; wavelength 2.03 mum; Distributed Bragg reflector (DBR) laser; GaSb; frequency stabilized; tapered laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2007303

Filename

4663111