• DocumentCode
    968928
  • Title

    Transverse mode control in InGaAsP/InP buried crescent diode lasers

  • Author

    Oomura, E. ; Higuchi, H. ; Hirano, R. ; Namizaki, H. ; Murotani ; Susaki, W.

  • Author_Institution
    Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
  • Volume
    17
  • Issue
    2
  • fYear
    1981
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    Transverse mode stabilisation of InGaAsP/InP buried crescent laser diodes emitting at 1.3 ¿m is described. Width and thickness of the active region have been reduced to stabilise the transverse mode. Operation up to 17 mW/facet in a stable transverse mode and threshold current as low as 12 mA in CW operation have been obtained.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; CW operation; InGaAsP/InP buried crescent laser diodes; threshold current; transverse mode stabilisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810060
  • Filename
    4245521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=968928