The Influence of Nonequilibrium Distribution on Room-Temperature Lasing Spectra in Quantum-Dash Lasers

Author

Tan, C.L. ; Djie, H.S. ; Wang, Y. ; Dimas, C.E. ; Hongpinyo, V. ; Ding, Y.H. ; Ooi, B.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA

Volume

21

Issue

1

fYear

2009

Firstpage

30

Lastpage

32

Abstract

We demonstrate the effect of nonequilibrium carrier distribution in a self-assembled InAs-InAlGaAs quantum-dash-in-well semiconductor lasers on InP substrate. The progressive changes of electroluminescence spectrum with increasing injections show the presence of localized photon reabsorption and lasing action from different dash ensembles at room temperature as opposed to that obtained in typical self-assembled quantum-dot lasers only at low temperature below 100 K.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum dash lasers; semiconductor lasers; InAs-InAlGaAs; InP; electroluminescence spectrum; nonequilibrium carrier distribution; photon reabsorption; quantum-dash lasers; quantum-dash-in-well semiconductor lasers; quantum-dot lasers; room-temperature lasing spectra; substrate; Nonequilibrium distribution; quantum-dash (Qdash); quantum-dot (QD); supercontinuum broadband laser;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2008197

Filename

4663113