Title :
Buried heterostructure AlGaAs lasers on semi-insulating substrates
Author :
Bar-Chaim, N. ; Katz, Justin ; Ury, I. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, USA
Abstract :
Buried heterostructure (BH) AlGaAs lasers were fabricated on Cr-doped semi-insulating substrates. Low threshold current (8 mA/¿m stripe width for cavity length of 300 ¿m), a high differential quantum efficiency (55%), and stable transverse mode operation were realised.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; Cr doped semi insulating substrates; III-V semiconductors; buried heterostructure AlGaAs lasers; differential quantum efficiency; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810077
