Title :
Low threshold GaInAsP/InP lasers with good temperature dependence grown by low pressure MOVPE
Author :
Hirtz, J.P. ; Razeghi, M. ; Larivain, J.P. ; Hersee, S. ; Duchemin, J.P.
Author_Institution :
Thomson-CSF, LCR, Orsay, France
Abstract :
Room temperature pulsed operation has been achieved in the 1.2¿1.3 ¿m region for GaInAsP/InP lasers grown by low pressure metalorganic vapour phase epitaxy. Thresholds as low as 1.2 kA/cm2 and threshold temperature dependences of exp T/T0, with T0 up to 80 K, have been obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaInAsP/InP lasers; III-V semiconductor; low pressure metalorganic vapour phase epitaxy; threshold temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810081
