DocumentCode :
969221
Title :
Strain relaxation in Pb-alloy Josephson junction electrode materials
Author :
Murakam, M. ; Kircher, C.J.
Author_Institution :
IEEE TMAG
Volume :
15
Issue :
1
fYear :
1979
fDate :
1/1/1979 12:00:00 AM
Firstpage :
443
Lastpage :
445
Abstract :
An investigation has been carried out of the relationship between strain relaxation in Pb-alloy Josephson junction electrode materials and the failure of Pb-alloy/oxide/Pb-alloy junctions during cycling between 300 and 4.2K. The strain behavior of Pb-12wt% In-4wt%Au alloy films evaporated on oxidized Si substrates has been studied using an x-ray diffraction technique. The thermal expansion coefficient mismatch strain is found to be partially relaxed upon both cooling to 4.2K and rewarming to 300K. The amount of strain relaxation depends strongly on film thickness h, decreasing from 0.5% to 0.2% as h is reduced from 0.5 to 0.1μm. The stability of Pb-alloy junctions during thermal cycling correlates with the observed levels of strain relaxation. A deformation mechanism map has been constructed for Pb films from which the dominant strain relaxation mechanisms can be predicted. From the analysis, two strain relaxation mechanisms are expected: dislocation glide at high strain and grain boundary diffusion creep at low strain near 300K. Dislocation lines and hillocks were observed in films that had been repeatedly cycled, providing supporting evidence for these mechanisms. It is proposed that junction failure occurs when non-uniform deformation in the electrodes causes a high enough local stress to rupture the tunnel barrier, producing a short.
Keywords :
Component reliability; Josephson devices; Thermal factors; Capacitive sensors; Cooling; Electrodes; Josephson junctions; Semiconductor films; Silicon alloys; Substrates; Thermal expansion; Thermal stability; X-ray diffraction;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1979.1060107
Filename :
1060107
Link To Document :
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