High-transconductance β-SiC buried-gate JFETs

Author

Kelner, Galina ; Shur, Michael S. ; Binari, Steven ; Sleger, Kenneth J. ; Kong, Hua-Shuang

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

36

Issue

6

fYear

1989

fDate

6/1/1989 12:00:00 AM

Firstpage

1045

Lastpage

1049

Abstract

An improved performance buried-gate SiC junction field-effect transistor (JFET) has been fabricated and evaluated. This structure uses an n-type β-SiC film epitaxially grown by chemical vapor deposition on the Si(0001) face of a p-type 6H α-SiC single crystal. The current in the n-type channel was modulated using the p-type α-SiC layer as a gate. Electron-beam-evaporated Ti/Au was utilized as an ohmic contact to the n-type β-SiC layer, and thermally evaporated Al was used to contact the p-type gate. A maximum DC transconductance of 20 mS/mm was obtained, which is the highest reported for a β-SiC FET structure. The experimental data are analyzed using a charge-control model. Calculated drain current versus drain voltage characteristics for a buried-gate JFET are in good agreement with experimental data

Keywords

junction gate field effect transistors; ohmic contacts; semiconductor device models; semiconductor epitaxial layers; semiconductor materials; semiconductor technology; silicon compounds; vapour phase epitaxial growth; Al-SiC; DC transconductance; Si substrate; SiC-Si; TiAu-SiC; VPE; buried-gate JFET; charge-control model; chemical vapor deposition; drain current; drain voltage characteristics; experimental data; junction field-effect transistor; n-type channel; ohmic contact; thermally evaporated Al; Chemical vapor deposition; Data analysis; Design optimization; Electron mobility; FETs; Hall effect; JFETs; Silicon carbide; Substrates; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.24346

Filename

24346