• DocumentCode
    969382
  • Title

    Optoelectronic matrix switch using heterojunction switching photodiodes

  • Author

    Hara, E.H. ; Machida, Shimon ; Ikeda, Makoto ; Kanbe, H. ; Kimura, Tomohiro

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    4
  • fYear
    1981
  • Firstpage
    150
  • Lastpage
    151
  • Abstract
    Heterojunction switching photodiodes (InGaAs/InP) were used to construct a 3×3 matrix switch. Isolation and cross-talk losses were better than 63 dB over a frequency range of 10 Hz to 400 MHz and 400 Mbit/s digital signals were switched with switching times shorter than 30 ns.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; photodiodes; semiconductor switches; 10 Hz to 400 MHz; InGaAs/InP; heterojunction switching photodiode; optoelectronic matrix switch; semiconductor switches;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810106
  • Filename
    4245569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=969382