DocumentCode
969455
Title
Design Consideration in High Temperature Analog CMOS Integrated Circuits
Author
Shoucair, F.S.
Author_Institution
Yale University, New Haven, CT, USA
Volume
9
Issue
3
fYear
1986
fDate
9/1/1986 12:00:00 AM
Firstpage
242
Lastpage
251
Abstract
The design of CMOS analog integrated circuits to be operated at elevated junction temperatures is discussed. Considerations which have successfully been implemented in the design of basic analog cells for operation over the 25°-250°C range are emphasized. Simple models arc presented along with the temperature dependencies of key design parameters. These models and high-temperature trends represent sufficient information for first-order hand analysis prior to computeraided design.
Keywords
CMOS analog integrated circuits; CMOS integrated circuits, analog; CMOS analog integrated circuits; CMOS technology; MOSFET circuits; Military standards; Semiconductor device modeling; Space exploration; Space technology; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1986.1136646
Filename
1136646
Link To Document