Title :
Design Consideration in High Temperature Analog CMOS Integrated Circuits
Author_Institution :
Yale University, New Haven, CT, USA
fDate :
9/1/1986 12:00:00 AM
Abstract :
The design of CMOS analog integrated circuits to be operated at elevated junction temperatures is discussed. Considerations which have successfully been implemented in the design of basic analog cells for operation over the 25°-250°C range are emphasized. Simple models arc presented along with the temperature dependencies of key design parameters. These models and high-temperature trends represent sufficient information for first-order hand analysis prior to computeraided design.
Keywords :
CMOS analog integrated circuits; CMOS integrated circuits, analog; CMOS analog integrated circuits; CMOS technology; MOSFET circuits; Military standards; Semiconductor device modeling; Space exploration; Space technology; Temperature dependence; Temperature distribution; Threshold voltage;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
DOI :
10.1109/TCHMT.1986.1136646
