DocumentCode :
969462
Title :
Void formation mechanism in VLSI aluminum metallization
Author :
Hinode, Kenji ; Asano, Isamu ; Homma, Yoshio
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Volume :
36
Issue :
6
fYear :
1989
fDate :
6/1/1989 12:00:00 AM
Firstpage :
1050
Lastpage :
1055
Abstract :
Void formation is aluminum lines caused by high-temperature heat treatment has been investigated, particularly from the aspect of mechanical interaction between the passivation layer and aluminum lines. It is found that there are two effects causing voids in aluminum lines: the deformation of the passivation layer and the so-called thermal expansion mismatch between aluminum lines and their surrounding layers. While the thermal expansion effect is independent of aluminum line dimensions, the passivation deformation effect dominates preferentially in wide aluminum lines. Bulge deformation of the passivation layer is caused by its own compressive stress, forcing the encapsulated aluminum to expand. In fine lines, void formation is controlled by the volume difference caused by the thermal expansion mismatch and aluminum diffusion
Keywords :
VLSI; aluminium; failure analysis; integrated circuit technology; metallisation; passivation; reliability; Al diffusion; Al-Cu-Si metallisation; Si; Si3N4-Al-Si; bulge deformation; compressive stress; fine lines; high-temperature heat treatment; mechanical interaction; passivation deformation effect; passivation film stress; passivation layer; thermal expansion mismatch; void formation mechanism; volume difference; Aluminum; Heat treatment; Metallization; Optical films; Optical microscopy; Passivation; Plasma temperature; Scanning electron microscopy; Transmission electron microscopy; Very large scale integration;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.24347
Filename :
24347
Link To Document :
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