Title :
Bistable operation in semiconductor lasers with inhomogeneous excitation
Author :
Kawaguchi, H. ; Iwane, G.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Bistable operation in InP/InGaAsP/InP DH lasers with a periodic excitation stripe geometry is reported. Bistability is observed within a current range of about 10% of the threshold current for maximum value. The range strongly depends on the stripe geometry and heat sink temperature, and they are controllable.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical bistability; semiconductor junction lasers; III-V semiconductors; InP/InGaAsP/InP; heat sink temperature; inhomogeneous excitation; periodic excitation stripe geometry; semiconductor junction lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810117
