Title :
GaAs binary frequency dividers for high speed applications up to 10 GHz
Author :
Rocchi, M. ; Boccon-Gibod, D.
Author_Institution :
Laboratoires d´´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
Very high speed GaAs frequency dividers with a maximum operating frequency of 10 GHz are proposed. The dividers are based on a two-phase dynamic logic concept. Breadboard and simulation results are presented and discussed.
Keywords :
field effect integrated circuits; frequency dividers; gallium arsenide; integrated logic circuits; solid-state microwave circuits; 10 GHz; Schottky barrier diodes; digital frequency divider; field effect integrated circuit; integrated logic circuit; two phase dynamic logic circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810118
