DocumentCode
969521
Title
Alloy scattering effects and calculated mobility in n-type Ga0.47In0.53As
Author
Pearsall, T.P.
Author_Institution
Bell Laboratories, Murray Hill, USA
Volume
17
Issue
4
fYear
1981
Firstpage
169
Lastpage
170
Abstract
The electron Hall mobility has been calculated in the relaxation time approximation as a function of carrier concentration in n-type Ga0.47In0.53As. Comparison with measured mobilities shows excellent agreement at room temperature, but significant disagreement at 77 K. It is argued that the discrepancy between calculation and experiment is the manifestation of an alloy scattering effect with a temperature variation quite different from the T¿¿ dependence derived by Brooks.
Keywords
Hall effect; III-V semiconductors; carrier mobility; carrier relaxation time; gallium arsenide; impurity scattering; indium compounds; 77K; III-V semiconductors; alloy scattering effect; carrier concentration; electron Hall mobility; n-Ga0.47In0.53As; relaxation time approximation; room temperature; semiconductor alloys;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810119
Filename
4245582
Link To Document